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  schottky barrier diode rsx501l-20 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1) small power mold type. (pmds) 2) low v f , low i r . 3) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions forward voltage v f - - 0.39 v i f =3.0a reverse current i r - - 500 a v r =20v parameter limits reverse voltage (repetitive peak) 25 reverse voltage (dc) 20 average rectified forward current 5 forward current surge peak (60hz ?1cyc)(*1) 70 junction temperature 125 storage temperature ? 40 to ? 125 (*1)tc=90c max mounted on epoxy board. 180half sine wave parameter 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 pmds 2.0 4.2 2.0 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max rohm : pmds jedec : sod-106 manufacture date 7 5 1/3 2011.05 - rev.d data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rsx501l-20 0 5 10 15 20 25 30 ave:11.6ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 ta=-25 ta=125 ta=75 ta=25 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 ta=125 ta=75 ta=25 ta=-25 10 100 1000 0 5 10 15 20 25 30 f=1mhz 950 960 970 980 990 1000 1010 1020 1030 1040 1050 ave:997.4pf ta=25 f=1mhz vr=0v n=10pcs 0 100 200 300 400 500 600 700 800 900 1000 ta=25 vr=20v n=30pcs ave:196.8ua 330 340 350 360 370 380 ave:350.0mv ta=25 if=3a n=30pcs 0 50 100 150 200 250 300 ave:186.0a 8.3ms ifsm 1cyc 0 50 100 150 200 250 300 1 10 100 t ifsm 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) mounted on epoxy board 1ms im=100ma if=1a 300us time 0 1 2 3 4 5 0246810 sin(?180) dc d=1/2 0 50 100 150 200 250 300 110100 8.3ms ifsm 1cyc 8.3ms 2/3 2011.05 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsx501l-20 0 5 10 15 0 25 50 75 100 125 sin(?180) dc d=1/2 0 5 10 15 0 25 50 75 100 125 sin(?180) dc d=1/2 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve(io-tc) 0 1 2 3 4 5 0102030 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=10v 0a 0v t tj=125 d=t/t t vr io vr=10v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k no break at 30kv no break at 30kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.05 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes


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